2N3773
High power NPN transistor
Features
■ High power dissipation
■ Low collector-emitter saturation voltage
t(s)De...
2N3773
High power
NPN transistor
Features
■ High power dissipation
■ Low collector-emitter saturation voltage
t(s)Description cThe device is a planar
NPN transistor mounted in uTO-3 metal case. It is intended for linear rodamplifiers and inductive switching applications.
1 2
TO-3
Obsolete Product(s) - Obsolete PFigure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
2N3773
2N3773
Package TO-3
Packaging Tray
October 2008
Rev 2
1/7
www.st.com
7
Electrical ratings
1 Electrical ratings
2N3773
Table 2. Absolute maximum ratings
Symbol
Parameter
Value Unit
VCEO Collector-emitter voltage (IB = 0)
140 V
VCEV Collector-emitter voltage (VBE = -1.5 V)
160 V
VCBO Collector-base voltage (IE = 0)
160 V
VEBO
)IC t(sICM ucIB rodIBM PPtot teTstg leTj
Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating ju...
