SST32HF324C

www.DataSheet4U.com Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF324C SST32HF324C32Mb Flash + 4Mb SRAM (x16) MCP ComboMemories Preliminary Specifications FEATURES: ComboMemory organized as: – 2M x16 Flash + 256K x16 SRAM Single 2.7-3.3V Read and Write Operations Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 15 mA (typical) for Flash or SRAM Read – Standby Current: 12 µA (typical) Flexible Erase Capability – Uniform 2 KWord sectors – Uniform 32 KWord size blocks Erase-Suspend/Erase-Resume Capabilities Security-ID Feature – User: 128 bits Fast Read Access Times: – Flash: 70 ns – SRAM: 70 ns Latched Address and Data for Flash Flash Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 µs (typical) Flash Automatic Erase and Program Timing – Internal VPP Generation Flash End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Set Package Available – 48-ball LBGA (10mm x 12mm x 1.4mm) All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST32HF324C ComboMemory devices integrate a CMOS flash memory bank with a CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high-per...