SST34HF162G

www.DataSheet4U.com 16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory SST34HF162G / SST34HF164G SST34HF162G/164G16Mb Dual-Bank Flash + 2/4 Mb SRAM MCP ComboMemory Preliminary Specifications FEATURES: Flash Organization: 1M x16 – 16 Mbit: 12 Mbit + 4 Mbit Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash SRAM Organization: – 2 Mbit:128K x16 – 4 Mbit: 256K x16 Single 2.7-3.3V Read and Write Operations Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: (typical values @ 5 MHz) – Active Current: Flash 10 mA (typical) SRAM 6 mA (typical) – Standby Current: 10 µA (typical) Hardware Sector Protection (WP#) – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array Sector-Erase Capability – Uniform 2 KWord sectors Block-Erase Capability – Uniform 32 KWord blocks Read Access Time – Flash: 70 ns – SRAM: 70 ns Erase-Suspend / Erase-Resume Capabilities Latched Address and Data Fast Erase and Word-Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Set Packages Available – 48-ball LFBGA (6mm x 8mm) – 48-b...