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MD6003

Semelab Plc

Complementary Dual General Purpose Transistor NPN/PNP Silicon

MD6003 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 1.02 (0.040) Max....


Semelab Plc

MD6003

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Description
MD6003 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 1.02 (0.040) Max. COMPLEMENTARY DUAL GENERAL PURPOSE TRANSISTOR NPN / PNP SILICON 12.7 (0.500) Min. 6.10 (0.240) 6.60 (0.260) 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 2.54 (0.100) 3 2 4 5 6 0.74 (0.029) 1.14 (0.045) 1 45˚ 0.71 (0.028) 0.86 (0.034) TO77 PACKAGE PIN 1 – Collector PIN 2 – Base PIN 3 – Emitter PIN 4 – Emitter PIN 5 – Base PIN 6 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC TJ , Tstg Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Operating and Storage Junction Temperature Range 30V 50V 5.0V 500mA –65 to +200°C Per Side 575mW 3.29mW/°C 1.8mW 10.3mW/°C Total Device 625mW 3.57mW/°C 2.5mW 14.3mW/°C PD PD Total Device Dissipation Total Device Dissipation @ TA = 25°C Derate above 25°C @ TC = 25°C Derate above 25°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 MD6003 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO* V(BR)CBO V(BR)EBO IBEV ICEV ICBO Test Conditions IB = 0 IE = 0 IC = 0 VBE = 3.0V VBE(off) =3.0V IE = 0 VCE = 10V VCE = 10V VCE = 10V Min. 30 50 5.0 Typ. Max. Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Base C...




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