2STL1360

2STL1360 2STX1360 Low voltage fast-switching NPN power transistors Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ LED ■ Voltage regulation ■ Relay drive Description The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. TO-92 TO-92L Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking 2STL1360 L1360 2STX1360 X1360 October 2009 Packages TO-92L TO-92 Doc ID 11763 Rev 3 Packaging Bag Bag 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings 2STL1360, 2STX1360 Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJA Thermal resistance junction-ambient Value Unit 2STX1360 2STL1360 80 60 6 3 5 0.2 0.4 1 1.2 -65 to 150 150 V V V A A A A W °C °C __max Value TO-92 125 TO-92L 104 Unit °C/W 2/10 Doc ID 11763 Rev 3 2STL1360, 2STX1360 2 Electrical characteristics Electrical characteristics Tcase ...