SST34HF1641J

www.DataSheet4U.com 16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory SST34HF1641J / SST34HF1681J SST34HF168116Mb CSF (x8/x16) + 2/4/8 Mb SRAM (x16) MCP ComboMemory Data Sheet FEATURES: Flash Organization: 1M x16 or 2M x8 Dual-Bank Architecture for Concurrent Read/Write Operation – Bottom Sector Protection – 16 Mbit: 12 Mbit + 4 Mbit PSRAM Organization: – 4 Mbit: 256K x16 – 8 Mbit: 512K x16 Single 2.7-3.3V Read and Write Operations Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 25 mA (typical) – PSRAM Standby Current: 40 µA (typical) Hardware Sector Protection (WP#) – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array Byte Selection for Flash (CIOF pin) – Selects 8-bit or 16-bit mode (56-ball package only) Sector-Erase Capability – Uniform 2 KWord sectors Block-Erase Capability – Uniform 32 KWord blocks Read Access Time – Flash: 70 ns – PSRAM: 70 ns Erase-Suspend / Erase-Resume Capabilities Security ID Feature – SST: 128 bits – User: 128 bits Latched Address and Data Fast Erase and Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polli...