NE687

www.DataSheet4U.com SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES LOW NOISE: 1.3 dB AT 2.0 GHz LOW VOLTAGE OPERATION EASY TO MATCH HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES 18 (SOT 343 STYLE) NE687 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six different low cost plastic surface mount package styles. rs e b m : u t E n o T t n O . e ar N r n p a g E S si n g h e et A i e E d w w PL llo as r e t o o n f a f r d e Th his ded fo office t es en l from ELECTRICAL CHARACTERISTICS m a s m l o l c ca re e as e l : P s l i a det 8730 NE6 8733 N E 6 8 7 39 NE6 8739R NE6 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68718 2SC5185 18 NE68719 2SC5186 19 NE68730 2SC5184 30 NE68733 2SC5182 33 SYMBOLS fT fT NFMIN NFMIN |S21e|2 |S21e|2 hFE ICBO IEBO CRE4 PT RTH(J-A) RTH(J-C) Gain Bandwidth Product at VCE = 2 V, IC = 20 mA, f = 2.0 GHz Gain Bandwidth Product at VCE = 1 V, IC = 10 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz Insertion Power Gain at VCE = 2V, I...