NE687M23

www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 FEATURES NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M23 0.5 1 0.25 1.0 0.4 2 3 0.25 DESCRIPTION 0.6 0.15 0.2 0.15 The NE687M23 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE687 is also available in six different low cost plastic surface mount package styles. BOTTOM VIEW PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Forward Current Gain at VCE = 2 V, IC = 20 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 0.5 V, IE = 0, f...