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DATA SHEET
NEC's NPN SILICON TRANSISTOR NE687M33
FEATURES
• • LOW NOISE: NF = 1.5 dB TYP. @ VCE =...
www.DataSheet4U.com
DATA SHEET
NEC's
NPN SILICON
TRANSISTOR NE687M33
FEATURES
LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER NE687M33-A NE687M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM 8 mm wide embossed taping Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot
Note
RATINGS 5.0 3.0 2.0 30 90 150 −65 to +150
UNIT V V V mA mW °C °C
Tj Tstg
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NE687M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance fT |S21e|2 NF Cre Note 2 VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz, ZS = Zopt VCB = 0.5 V, IC = 0 mA, f = 1 MHz 10 7 – – 12 9 1.5 0.4 – – 2.0 0.7 GHz dB dB pF ICBO IEBO hFE Note 1 VCB = ...