STP180N55

www.DataSheet4U.com STB180N55 STP180N55 N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220 MDmesh™ Low Voltage Power MOSFET TARGET SPECIFICATION General features Type STB180N55 STP180N55 ■ ■ VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A (Note 1) 120A (Note 1) 3 1 1 2 3 ULTRA LOW ON-RESISTANCE 100% AVALANCHE TESTED D²PAK TO-220 Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ HIGH CURRENT SWITCHING APPLICATION Order codes Sales Type STB180N55 STP180N55 Marking B180N55 P180N55 Package D²PAK TO-220 Packaging TAPE & REEL TUBE January 2006 This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice Rev 1 1/11 www.st.com 11 1 Electrical ratings STP180N55 - STB180N55 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-source Voltage (VGS=0) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor dv/dt Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Val...