STP35NF10

STP35NF10 STB35NF10 N-CHANNEL 100V - 0.030Ω - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STP35NF10 STB35NF10 s s s s VDSS 100 V 100 V RDS(on) < 0.035 Ω < 0.035 Ω ID 40 A 40 A TYPICAL RDS(on) = 0.030Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TO-220 3 3 1 2 1 D2PAK DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ±20 40 28 160 115 0.77 13 300 – 55 to 175 (1) ISD ≤35A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 20A, VDD = 80V Unit V V V A A A W W/°C V/ns mJ °C (q ) Pulse width limit...