STB3NA60-1
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STB3NA60-1
s s s s s s s
V DSS 600 V
R DS(on) <4Ω
ID 2.9 A
TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED I2PAK TO-262
3...
