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STB3NC60 Dataheets PDF



Part Number STB3NC60
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STB3NC60 DatasheetSTB3NC60 Datasheet (PDF)

® STB3NC60 N - CHANNEL 600V - 3.3Ω - 3A - D2PAK/I2PAK PowerMESH™ ΙΙ MOSFET TYPE STB3NC60 ν ν ν ν ν VDSS 600 V R DS(on) < 3.6 Ω ID 3A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for.

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® STB3NC60 N - CHANNEL 600V - 3.3Ω - 3A - D2PAK/I2PAK PowerMESH™ ΙΙ MOSFET TYPE STB3NC60 ν ν ν ν ν VDSS 600 V R DS(on) < 3.6 Ω ID 3A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ν SWITCH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ν I2PAK TO-262 (Suffix "-1") D2PAK TO-263 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 600 600 ± 30 3 1.9 12 80 0.64 4 -65 to 150 150 (1) ISD ≤3A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C (•) Pulse width limited by safe operating area February 2000 1/9 STB3NC60 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1.56 62.5 0.5 300 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = IAR , VDD = 50 V) Max Value 3 100 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V(BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µ A V GS = 0 Min. 600 1 50 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage VDS = Max Rating Drain Current (V GS = 0) VDS = Max Rating Gate-body Leakage Current (V DS = 0) VGS = ± 30 V T c = 125 o C ON (∗) Symbol VGS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage VDS = V GS Static Drain-source On Resistance VGS = 10V Test Conditions I D = 250 µ A I D = 1.5 A 3 Min. 2 Typ. 3 3.3 Max. 4 3.6 Unit V Ω A On State Drain Current V DS > ID(on) x R DS(on)max VGS = 10 V DYNAMIC Symbol gfs ( ∗) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x R DS(on)max VDS = 25 V f = 1 MHz I D = 1.5 A V GS = 0 Min. Typ. 2 400 57 7 Max. Unit S pF pF pF 2/9 STB3NC60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300 V I D = 1.5 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 3) VDD = 480 V ID = 3 A V GS = 10 V Min. Typ. 9 13 13 2.3 4.4 18.2 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480 V I D = 3 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) Min. Typ. 13 15 21 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM ( • ) VSD ( ∗) t rr Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A V GS = 0 420 1.5 7.1 ISD = 3 A di/dt = 100 A/ µ s VDD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 3 12 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for D2PAK/I2PAK Thermal Impedancefor D2PAK/I2PAK 3/9 STB3NC60 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB3NC60 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STB3NC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB3NC60 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 8.95 2.44 10 13.2 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 1 0.2 8 13.5 3.78 1.4 MIN. 0.169 0.098 0.027 0.047 0.049 0.017 0.047 0.352 0.096 0.393 0.519 0.137 0.050 inch TYP. MAX. 0.1 81 0.1 06 0.0 36 0.0 54 0.0 55 .


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