N-CHANNEL Power MOSFET
N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET
TYPE STB3NC90
s s
STB3NC90Z
VDSS 900V
RDS(on)...
Description
N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET
TYPE STB3NC90
s s
STB3NC90Z
VDSS 900V
RDS(on) < 3.5Ω
ID 3.5 A
s s s
TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
3 1
D2PAK
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 900 900 ± 25 3.5 2.2 14 100 0.8 ±50 2.5 3 –65 to 150 150
(1)ISD ≤3.5A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*).Limited only by maximum temperature allowed
Unit V V V A A A W W/°C mA KV V/ns °C °C
()Pulse width limited by saf...
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