N-CHANNEL Power MOSFET
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP
Datasheet
N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Pow...
Description
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP
Datasheet
N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages
TAB
13 D2PAK
TAB
TAB
TAB
23 1
DPAK
IPAK
3 12
1 23 TO-220
123 TO-220FP
D(2, TAB)
G(1)
Features
Order codes VDS RDS(on) max.
STB3NK60ZT4
STD3NK60Z-1
STD3NK60ZT4
600 V
3.6 Ω
STP3NK60Z
STP3NK60ZFP
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected
ID 2.4 A
Package D2PAK IPAK DPAK TO-220 TO-220FP
Applications
S(3)
AM01475V1
Switching applications
Product status link STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
DS2912 - Rev 6 - August 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
D2PAK, TO-220
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
2.4
ID Drain current (continuous) at ...
Similar Datasheet