ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
FEATURES
• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
N...
Description
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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
FEATURES
SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
Noise Figure, NF (dB)
NE321000
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
GATE LENGTH: ≤0.2 µm GATE WIDTH: 160 µm
DESCRIPTION
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
Drain Current, ID (mA)
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
PART NUMBER PACKAGE OUTLINE
SYMBOLS NF GA1 IDSS VP gM IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V, VGS = 0 V Pinch-off Voltage, VDS = 2 V, ID = 100 µA Transconductance, VDS = 2 V, ID = 10 µA Gate to Source Leakage Current, VGS = -3 V UNITS dB dB mA V mS µA 12.0 15 -0.2 40 MIN
NE321000 CHIP
TYP 0.35 13.5 40 -0.7 55 0.5 10 70 -2.0 MAX 0.45
Note: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
California Eastern Laboratories
Associated Gain, GA (dB)
HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GH...
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