STB135N10

www.DataSheet4U.com N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220 LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STB135N10 STP135N10 s s s s STB135N10 STP135N10 TARGET DATA VDSS 100 V 100 V RDS(on) <0.009 Ω <0.009 Ω ID 135 A(*) 135 A(*) TYPICAL RDS(on) = 0.007Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 3 1 2 D2PAK TO-263 (Suffix “T4”) TO-220 DESCRIPTION This MOSFET is the result of STMicroelectronics’s well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode’s reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Telecom and Industrial. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s PRIMARY SWITCH IN TELECOM DC-DC CONVERTER s HIGH-EFFICIENCY DC-DC CONVERTERS s 42V AUTOMOTIVE APPLICATIONS s SYNCHRONOUS RECTIFICATION s DIESEL INJECTION s PWM UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(1) Ptot dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Opera...