N-channel Power MOSFET
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N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET™ POWER MOSFET
TYPE STV160NF02LA
s s s s s s s
S...
Description
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N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET™ POWER MOSFET
TYPE STV160NF02LA
s s s s s s s
STV160NF02LA
VDSS 20 V
RDS(on) < 0.0027 Ω
ID 160 A
TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE
10
1
PowerSO-10 INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION The STV160NF02LA represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DCDC CONVERTERS ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(**) ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
CONNECTION DIAGRAM (TOP VIEW)
Value 20 20 ± 15 160 113 640 210 1.4 330 ...
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