DatasheetsPDF.com

STP130NH02L Dataheets PDF



Part Number STP130NH02L
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-channel Power MOSFET
Datasheet STP130NH02L DatasheetSTP130NH02L Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION Table 1: General Features TYPE STB130NH02L STP130NH02L ■ ■ ■ ■ ■ ■ ■ STB130NH02L STP130NH02L Figure 1:Package RDS(on) < 0.0044 Ω < 0.0044 Ω ID 90 A(2) 90 A(2) VDSS 24 V 24 V TYPICAL RDS(on) = 0.0034 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWE.

  STP130NH02L   STP130NH02L



Document
www.DataSheet4U.com N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION Table 1: General Features TYPE STB130NH02L STP130NH02L ■ ■ ■ ■ ■ ■ ■ STB130NH02L STP130NH02L Figure 1:Package RDS(on) < 0.0044 Ω < 0.0044 Ω ID 90 A(2) 90 A(2) VDSS 24 V 24 V TYPICAL RDS(on) = 0.0034 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 3 1 2 D2PAK TO-263 (Suffix “T4”) TO-220 DESCRIPTION The STB_P130NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents. Figure 2: Internal Schematic Diagram APPLICATIONS ■ SYNCHRONOUS RECTIFICATIONS FOR TELECOM AND COMPUTER ■ OR-ING DIODE Table 2: Ordering Information SALES TYPE STB130NH02LT4 STP130NH02L MARKING B130NH02L P130NH02L PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj April 2005 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 90 90 360 150 1 900 -55 to 175 Unit V V V V A A A W W/°C mJ °C 1/13 Rev. 2.0 STB130NH02L STP130NH02L Table 4: THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.0 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) Table 5: OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 25 mA, VGS = 0 VDS = 20 V VDS = 20 V VGS = ± 20 V Min. 24 1 10 ±100 Typ. Max. Unit V µA µA nA TC = 125°C Table 6: ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 µA ID = 45 A ID = 22.5 A Min. 1 0.0034 0.005 0.0044 0.008 Typ. Max. Unit V Ω Ω Table 7: DYNAMIC Symbol gfs (5) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions VDS = 10 V ID = 45 A Min. Typ. 55 4450 1126 141 Max. Unit S pF pF pF Ω VDS = 15V f = 1 MHz VGS = 0 f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1.6 2/13 STB130NH02L STP130NH02L ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Qoss(6) Qgls(7) Para.


STU95N4F3 STP130NH02L STB130NH02L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)