2N5190

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125 in. Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage 2N5190 2N5191 2N5192 2N5190 2N5191 2N5192 Symbol VCEO Value 40 60 80 40 60 80 5.0 4.0 1.0 40 320 –65 to +150 Unit Vdc 4.0 AMPERES NPN SILICON POWER TRANSISTORS 40, 60, 80 VOLTS − 40 WATTS TO−225AA CASE 77 STYLE 1 3 2 1 Collector−Base Voltage VCBO Vdc Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC IB PD TJ, Tstg Vdc Adc Adc W mW/°C °C YWW 2 N519xG MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 3.12 Unit °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Y = Year WW = Work Week 2N519x = Device Code x = 0, 1, or 2 G = Pb−Free Package ORDERING INFORMATION Device 2N5190 2N5190G 2N5191 2N5191G 2N5192 2N5192G Package TO−225AA TO−225AA (Pb−Free) TO−2...