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RMPA0967

Fairchild Semiconductor

Power Edg TM Power Amplifier Module

RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module March 2006 RMPA0967 Cellular CDMA, CDM...


Fairchild Semiconductor

RMPA0967

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Description
RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module March 2006 RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Features ■ Single positive-supply operation with low power and shutdown modes ■ 39% CDMA/WCDMA efficiency at +28 dBm average output power ■ 52% AMPS mode efficiency at +31 dBm output power ■ Lead-free RoHS compliant 3 x 3 x 1mm leadless package ■ Internally matched to 50 Ohms and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance requirements ■ Meets HSDPA performance requirements ■ Alternative pin-out to Fairchild RMPA0965 General Description The RMPA0967 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High poweradded efficiency and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vref 1 DC Bias Control Vmode 2 Input Match Output Match 7 RF OUT 8 GND RF IN 3 6 GND Vcc1 4 5 Vcc2 (paddle ground on package bottom) ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RMPA0967 Rev. G RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module Absolute Ratings1 Parameter Supply Volt...




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