RMPA1759

RMPA1759 September 2004 RMPA1759 Korean-PCS PowerEdge™ Power Amplifier Module General Description The RMPA1759 power amplifier module (PAM) is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Features Single positive-supply operation and low power and shutdown modes 38% CDMA efficiency at +28dBm average output power Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry standard pinout Internally matched to 50Ω and DC blocked RF input/ output. Meets CDMA2000-1XRTT performance requirements Device Absolute Ratings1 Symbol Vcc1, Vcc2 Vref Vmode Pin TSTG Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Value 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V dBm °C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. ©2004 Fairchild Semiconductor Corporation RMPA1759 Rev. C RMPA1759 Module Block Diagram VCC1, VCC2 (1, 10) COLLECTOR BIAS PA MODULE GND (3,6, 7, 9, 11) INTERSTAGE MATCH INPUT MATCHING NETWORK INPUT STAGE OUTPUT STAGE OUTPUT MATCHING NETWORK RF IN (2) MMIC RF OUT (8) INPUT S...