2N6035

www.DataSheet4U.com (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features http://onsemi.com ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS Epoxy Meets UL 94 V−0 @ 0.125 in Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 2N6034 2N6035, 2N6038 2N6036, 2N6039 Symbol VCEO Value 40 60 80 40 60 80 5.0 4.0 8.0 100 40 320 1.5 12 – 65 to + 150 Unit Vdc 3 2 1 TO−225AA CASE 77 STYLE 1 Collector−Base Voltage VCBO Vdc MARKING DIAGRAM Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Continuous Peak VEBO IC IB PD PD TJ, Tstg Vdc Adc Apk mAdc W mW/°C W mW/°C °C Y WW 2N603x G YWW 2 N603xG = Year = Work Week = Device Code x = 4, 5, 6, 8, 9 = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 3.12 83.3 Unit °C/W °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of thi...