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BCR10KM-12LC Dataheets PDF



Part Number BCR10KM-12LC
Manufacturers Renesas Technology
Logo Renesas Technology
Description Triac
Datasheet BCR10KM-12LC DatasheetBCR10KM-12LC Datasheet (PDF)

www.DataSheet4U.com BCR10KM-12LC Triac Medium Power Use REJ03G0323-0200 Rev.2.00 Dec.17.2004 Features • • • • IT (RMS) : 10 A VDRM : 600 V IFGTI , IRGTI, IRGT : 50 mA Viso : 2000 V • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Motor control, Heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-.

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www.DataSheet4U.com BCR10KM-12LC Triac Medium Power Use REJ03G0323-0200 Rev.2.00 Dec.17.2004 Features • • • • IT (RMS) : 10 A VDRM : 600 V IFGTI , IRGTI, IRGT : 50 mA Viso : 2000 V • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Motor control, Heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V Rev.2.00, Dec.17.2004, page 1 of 7 BCR10KM-12LC Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 10 60 15 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 96°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 1.8 1.5 1.5 1.5 50 50 50 — 3.7 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 15 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 5 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.2.00, Dec.17.2004, page 2 of 7 BCR10KM-12LC Performance Curves Maximum On-State Characteristics 102 7 5 Rated Surge On-State Current 80 Surge On-State Current (A) Tj = 25°C On-State Current (A) 3 2 101 7 5 3 2 100 7 5 3 2 10-1 70 60 50 40 30 20 10 0 100 2 3 5 7 101 2 3 5 7 102 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 On-State Voltage (V) Conduction Time (Cycles at 60 Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7102 2 3 5 7 103 VGM = 10 V PGM =5 W VGT = 1.5 V Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 IFGTI IRGTIII Typical Example Gate Voltage (V) PG(AV) = 0.5 W IFGT I IRGT II IRGT III IGM = 2 A IRGTI VGD = 0.2 V 2 3 5 7 104 101 -60 -40 -20 0 20 40 60 80 100120140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 2 3 5 7 103 2 3 5 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60 Hz) Rev.2.00, Dec.17.2004, page 3 of 7 BCR10KM-12LC Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (°C/W) 103 No Fins On-State Power Dissipation (W) 7 5 3 2 102 7 5 3 2 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60 Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current 160 120 100 80 60 40 Ambient Temperature (°C) 140 Curves apply regardless of conduction angle 140 120 100 80 All fins are black painted aluminum and greased 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 Case Temperature (°C) 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 RMS O.


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