PHOTOTRANSISTOR PHOTOCOUPLER. EL817 Datasheet

EL817 PHOTOCOUPLER. Datasheet pdf. Equivalent

EL817 Datasheet
Recommendation EL817 Datasheet
Part EL817
Description 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
Feature EL817; 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 Series Schematic Features: • Compliance Halogens Free .
Manufacture Everlight Electronics
Datasheet
Download EL817 Datasheet




Everlight Electronics EL817
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 Series
Schematic
Features:
Compliance Halogens Free (Only copper leadframe)
(Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm)
Current transfer ratio
(CTR: 50~600% at IF = 5mA, VCE = 5V)
High isolation voltage between input
and output (Viso = 5000Vrms)
Creepage distance > 7.62mm
Operating temperature up to +110°C
Compact small outline package
The product itself will remain within RoHS compliant version
Compliance with EU REACH
UL and cUL approved(No.E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CQC approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL817 series of devices each consist of an infrared emitting diodes,
optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances
1 Copyright © 2010, EverVligehrt .A:l1l R7ightsRReesleeravesde. RDealetaes:e0D1a/0te2:D/2e0c 1258, 2017.Issue N:Ao:pDpPrCo-v00e0d0(046 Rev.17 ) www.everlight.com
 



Everlight Electronics EL817
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 Series
Absolute Maximum Ratings (Ta=25)
Parameter
Symbol
Rating
Unit
Input
Forward current
Peak forward current (1us, pulse)
Reverse voltage
Power dissipation
Derating factor (above Ta = 100°C)
Power dissipation
Derating factor (above Ta = 100°C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*1
Operating Temperature
Storage Temperature
Soldering Temperature*2
IF
IFP
VR
PD
PC
IC
VCEO
VECO
PTOT
VISO
TOPR
TSTG
TSOL
60
1
6
100
2.9
150
5.8
50
35
6
200
5000
-55 to 110
-55 to 125
260
mA
A
V
mW
mW/°C
mW
mW/°C
mA
V
V
mW
V rms
°C
°C
°C
Notes:
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*2 For 10 seconds
2 Copyright © 2010, EverVligehrt .A:l1l R7ightsRReesleeravesde. DRealetaes:e0D1a/0te2:/D2e0c1285, 2017. Issue:NAop: DpProC-v0e0d00(046Rev.17 ) www.everlight.com
 



Everlight Electronics EL817
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 Series
Electro-Optical Characteristics (Ta=25unless specified otherwise)
Input
Parameter
Forward Voltage
Reverse Current
Input capacitance
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol
VF
IR
Cin
Symbol
ICEO
BVCEO
BVECO
Min.
-
-
-
Min
-
35
6
Typ.
1.2
-
30
Typ.
-
-
-
Max.
Unit
1.4
V
10
µA
250
pF
Max.
Unit
100
nA
-
V
-
V
Transfer Characteristics
Parameter
Symbol
Min
Typ.
EL817
50
-
EL817A
80
-
Current
EL817B
130
-
Transfer EL817C
CTR
200
-
ratio
EL817D
300
-
EL817X
100
-
EL817Y
150
-
Collector-Emitter
saturation voltage
VCE(sat)
-
0.1
Isolation resistance
RIO
5× 1010
-
Floating capacitance
CIO
-
0.6
Cut-off frequency
fc
-
80
Rise time
Fall time
tr
-
-
tf
-
-
Max.
Unit
600
160
260
400
%
600
200
300
0.2
V
-
1.0
pF
-
kHz
18
µs
18
µs
* Typical values at Ta = 25°C
Condition
IF = 20mA
VR = 4V
V = 0, f = 1kHz
Condition
VCE = 20V, IF = 0mA
IC = 0.1mA
IE = 0.1mA
Condition
IF = 5mA ,VCE = 5V
IF = 20mA ,IC = 1mA
VIO = 500Vdc,
40~60% R.H.
VIO = 0, f = 1MHz
VCE = 5V, IC = 2mA
RL = 100, -3dB
VCE = 2V, IC = 2mA,
RL = 100
3 Copyright © 2010, EverVligehrt .A:l1l R7ightsRReesleeravesde. DRealetaes:e0D1a/0te2:/D2e0c1285, 2017. Issue:NAop: DpProC-v0e0d00(046Rev.17 ) www.everlight.com
 





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