PowerTrench MOSFET. FDD8586 Datasheet

FDD8586 Datasheet PDF, Equivalent


Part Number

FDD8586

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDD8586 Datasheet


FDD8586 Datasheet
www.DataSheet4U.com
January 2007
FDD8586/FDU8586
N-Channel PowerTrench® MOSFET
20V, 35A, 5.5m
Features
General Description
tm
„ Max rDS(on) = 5.5mat VGS = 10V, ID = 35A
„ Max rDS(on) = 8.5mat VGS = 4.5V, ID = 33A
„ Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V
„ Low gate resistance
„ 100% Avalanche tested
„ RoHS compliant
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Application
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G DS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID -Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD8586
FDU8586
Device
FDD8586
FDU8586
Package
TO-252AA
TO-251AA
Reel Size
13’’
N/A(Tube)
G
S
Ratings
20
±20
35
93
354
144
77
-55 to 175
Units
V
V
A
mJ
W
°C
1.94 °C/W
100 °C/W
52 °C/W
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2007 Fairchild Semiconductor Corporation
FDD8586/FDU8586 Rev. B
1
www.fairchildsemi.com

FDD8586 Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to
25°C
VDS = 16V,
VGS = 0V
VGS = ±20V
TJ = 150°C
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transcondductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 33A
VGS = 10V, ID = 35A
TJ = 175°C
VDS = 10V,ID = 35A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10V, VGS = 0V,
f = 1MHz
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(5)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
VDD = 10V, ID = 35A
VGS = 10V, RGS = 10
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 10V
ID = 35A
Ig = 1.0mA
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25oC, L = 0.3mH, IAS = 31A ,VDD = 18V, VGS = 10V.
VGS = 0V, IS = 35A
VGS = 0V, IS = 15A
IF = 35A, di/dt = 100A/µs
IF = 35A, di/dt = 100A/µs
Min
20
1.2
Typ Max Units
V
14.6 mV/°C
1
250
±100
µA
nA
1.6 2.5
V
-6.7 mV/°C
4.0 5.5
5.7 8.5 m
6.5 8.9
175 S
1865
550
335
1.2
2480
730
445
pF
pF
pF
9 18 ns
11 20 ns
47 75 ns
25 40 ns
34 48 nC
16 22 nC
3.2 nC
5.9 nC
0.89 1.25
0.82 1.2
30 45
23 35
V
ns
nC
FDD8586/FDU8586 Rev. B
2
www.fairchildsemi.com


Features Datasheet pdf www.DataSheet4U.com FDD8586/FDU8586 N-C hannel PowerTrench® MOSFET January 20 07 FDD8586/FDU8586 N-Channel PowerTren ch® MOSFET 20V, 35A, 5.5mΩ Features General Description „ Max rDS(on) = 5. 5mΩ at VGS = 10V, ID = 35A „ Max rDS (on) = 8.5mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 34nC(Typ) , VGS = 10V „ Low gate resistance „ 1 00% Avalanche tested „ RoHS compliant „ Vcore DC-DC for Desktop Computers an d Servers „ VRM for Intermediate Bus A rchitecture tm This N-Channel MOSFET has been designed specifically to impro ve the overall efficiency of DC/DC conv erters using either synchronous or conv entional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application D G G D S I-PAK (TO-251A A) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to S ource Voltage Gate to Source Voltage Dr ain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Sing.
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