Single P-Channel 1.8V Specified PowerTrench MOSFET
www.DataSheet4U.com
FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET
May 2006 May 2006
FDMA291P
Single P-...
Description
www.DataSheet4U.com
FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET
May 2006 May 2006
FDMA291P
Single P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 Drain Source D 1 D 2 G 3
Bottom Drain Contact
Features
–6.6 A, –20V. rDS(ON) = 42 mΩ @ VGS = –4.5V rDS(ON) = 58 mΩ @ VGS = –2.5V rDS(ON) = 98 mΩ @ VGS = –1.8V Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
6 D 5 D 4 S
MicroFET 2x2
Absolute Maximum Ratings
Symbol
VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
–20 ±8
(Note 1a)
Units
V V A W °C
–6.6 –24 2.4 0.9 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
52 145
°C/W
Package Marking and Ordering Information
Device Marking 291 Device FDMA291P Reel Size 7’’ Tape width 8mm Quantity 3000 units
©2006 Fairchild Semiconductor Corporation
FDMA291P Rev B (W)
FDMA291P Single P-Channel 1.8V Specif...
Similar Datasheet