MD2009DFX

www.DataSheet4U.com MD2009DFX High voltage NPN Power transistor for standard definition CRT display General features ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power package U.L. compliant Integrated free wheeling diode In compliance with the 2002/93/EC European directive 1 3 2 ISOWATT218FX Applications ■ Internal schematic diagram Horizontal deflection output for TV Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. RBE=60Ω typ. Order codes Part number MD2009DFX Marking MD2009DFX Package ISOWATT218FX Packaging Tube October 2006 Rev 4 1/10 www.st.com 10 Electrical ratings MD2009DFX 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB PTOT Visol Tstg TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Base-emitter voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (RMS) from all three leads to external heatsink Storage temperature Max. operating junction temperature Value 1500 700 7 10 16 6 58 2500 -65 to...