RF LDMOS Wideband Integrated Power Amplifiers
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
www.DataSheet4U.com
Order this document by MW5IC...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
www.DataSheet4U.com
Order this document by MW5IC2030M/D
The Wideband IC Line
RF LDMOS Wideband Integrated Power Amplifiers
The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1930 to 1990 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 23 dB Drain Efficiency — 20% ACPR @ 885 kHz Offset — - 49 dBc @ 30 kHz Channel Bandwidth Driver Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 200 mA, IDQ2 = 550 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 24 dB ACPR @ 885 kHz Offset — - 64 dBc @ 30 kHz Channel Bandwidth On - Chip Matching (50 Ohm Input, >4 Ohm Output) Integrated Temperature Compensation Capability with Enable/Disable Function On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) Integrated ESD Protection Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Also Available in Gul...
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