ST13007D

® ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE s HIGH VOLTAGE CAPABILITY s INTEGRATED FREE-WHEELING DIODE s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125 oC s LARGE RBSOA APPLICATIONS s UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W oC oC 1/7 ST13007D THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 1.56 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICES Collector Cut-off Current (VBE = 0) VCE =...