ST6006

www.DataSheet4U.com N Channel Enchancement Mode MOSFET 60V/60A DESCRIPTION ST6006S / ST6006 The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safetv margin against unexpected voltage transients. PIN CONFIGURATION TO-220-3L ST6006 TO-263-2L ST6006S APPLICATIONS z z z z Power Supplies Converters Power Motor controls Bridge Circuit FEATURE z 20V/2.8A, RDS(ON) = 85m-ohm @VGS = 4.5V z 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel Enchancement Mode MOSFET 60V/60A ORDERING INFORMATION Part Number ST6006T220TG ST6006T220RG Package TO-220-3L TO-263-2L ST6006S / ST6006 Part Marking ST6006D ST6006 ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain ...