STB70NF3LL

www.DataSheet4U.com ® STB70NF3LL N-CHANNEL 30V - 0.008 Ω - 70A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STB70NF3LL s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 70 A TYPICAL RDS(on) = 0.01 Ω @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED 3 1 DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS D2PAK TO-263 ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value 30 30 ± 15 70 50 280 100 0.67 -65 to 175 175 Un it V V V A A A W W /o C o o C C () Pulse width limited by saf...