STB80NF03L-04T

www.DataSheet4U.com STB80NF03L-04T-1 STB80NF03L-04T N-CHANNEL 30 V - 0.0035Ω - 80A D²PAK/I²PAK STripFET™II MOSFET Table 1: General Features TYPE STB80NF03L-04T STB80NF03L-04T-1 s s s Figure 1: Package RDS(on) < 0.004 Ω < 0.004 Ω ID (1) 80 A 80 A VDSS 30 V 30 V TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 3 12 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING D2PAK I2PAK Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number STB80NF03L-04TT4 STB80NF03L-04T-1 Marking B80NF03L-04T B80NF03L-04T Package D2PAK I2PAK Packaging TAPE & REEL TUBE Rev. 1 February 2005 1/11 STB80NF03L-04T-1 - STB80NF03L-04T Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID (#) ID (#) IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery Voltage Slope Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 80 80 320 300 2.0 2.0 –65 to 175 175 Unit V V V A A A W...