STW30NM60D

www.DataSheet4U.com STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh™ MOSFET Table 1: General Features TYPE STW30NM60D s s s s Figure 1: Package RDS(on) < 0.145 Ω ID 30 A VDSS 600 V s s TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE RATED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE FAST INTERNAL RECOVERY DIODE TO-247 DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Figure 2: Internal Schematic Diagram s APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT Table 2: Order Codes SALES TYPE STW30NM60D MARKING W30NM60D PACKAGE TO-247 PACKAGING TUBE Rev. 3 June 2004 1/9 STW30NM60D Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 600 600 ± 30 30 18.9 120 312 2.5 20 -55 to 150 -55 to 150 Unit V V V A A A W W/°C V/ns °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤30A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, ...