MRF6P3300HR3

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with fre‐ quencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applica‐ tions in 32 volt analog or digital television transmitter equipment. Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP ąPower Gain — 20.2 dB ąDrain Efficiency — 44.1% ąIMD — -30.8 dBc Typical Narrowband DVB-T OFDM Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM ąPower Gain — 20.4 dB ąDrain Efficiency — 29% ąACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW Output Power Features Characterized with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use Designed for Push-Pull Operation Only Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3 MRF6P3300HR5 470-860 MHz, 300 W, 32 V LATERAL N-CHANNEL ...