N-Channel Power MOSFET
STP24NF10
Datasheet
N-channel 100 V, 55 mΩ typ., 26 A STripFET II Power MOSFET in a TO-220 package
TAB
TO-220
1 23
F...
Description
STP24NF10
Datasheet
N-channel 100 V, 55 mΩ typ., 26 A STripFET II Power MOSFET in a TO-220 package
TAB
TO-220
1 23
Features
Type
VDS
RDS(on) max.
ID
STP24NF10
100 V
60 mΩ
26 A
Exceptional dv/dt capability 100% avalanche tested Low gate charge
D(2, TAB)
Applications
Switching applications
G(1) S(3)
AM01475v1_noZen
Description
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Product status link STP24NF10
Product summary
Order code
STP24NF10
Marking
P24NF10
Package
TO-220
Packing
Tube
DS1936 - Rev 8 - February 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
EAS(2)
Single-pulse avalanche energy
dv/dt(3)
Peak diode recovery voltage slope
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width limited by safe ope...
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