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S amHop Microelectronics C orp.
S T U/D3030NLS
F E AT UR E S
( mW)
Aug 08 , 2005
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
ID
30A
R DS (ON)
Max
S uper high dense cell design for low R DS (ON ).
18 @ V G S = 10V 25 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ Tc=25 C S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 30 75 20 50 -55 to 175 Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
3 50
C /W C /W
S T U/D3030NLS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S
a
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 12A V DS = 10V, V GS = 10V V DS = 10V, ID = 20A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.7 13 18 50 25 830 180 120 3 11 16 35 10 17 9 1.8 5 3 18 V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS
Gate Threshold Voltage
V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
b
Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
25 m ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =20A,V GS =10V V DS =15V, ID =20A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =15V, ID = 20A V GS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge
tD(ON) tr tD(OFF) tf Qg
ns ns ns ns nC nC nC nC
S T U/D3030NLS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is = 10A
Min Typ Max Unit
0.97 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
50
V G S =10V
20 V G S =4V V G S =4.5V
V G S =8V
40
ID , Drain C urrent(A)
30
I D , Drain C urrent (A)
15
10 T j=125 C 5 25 C 0 -55 C
20 V G S =3V 10 0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
30 1.6
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is tance Normalized
25
1.4 1.2 1.0 0.8 0.6 0.4 -55
V G S =4.5V I D =12A
V G S =10V I D =20A
R DS (on) (m W)
20 15 10 5 0
V G S =4.5V
V G S =10V
0
10
20
30
40
50
-25
0
25
50
75
100 125
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance V S J unction Temperature
3
S T U/D3030NLS
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
42
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
I D =20A
Is , S ource-drain current (A)
35
10.0
125 C
25 C
R DS (on) (m W)
28 21 14 7 0 25 C
70 C 125 C
70 C
1.0
0 2 4 6 8 10
0.4
0.6
0.8
1.0
1.2
1.4
V G S , G ate-S ource Voltage (V )
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T U/D3030NLS
1200
V G S , G ate to S ource V oltage (V )
10 8 6 4 2 0 V DS =15V I D =20A
1000
C , C apacitance (pF )
800 600 400 C os s 200 C rs s 0 0 5 10
C is s
6
15
20
25
30
0
3
6
9
12
15
18
21 24
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
200
S witching T ime (ns )
100 80
I D , Drain C urrent (A)
im it
1m s 1 1 0 0 ms 0m 1s s DC
100 60 10
T D(on)
T D(off) Tr
R
D
S
(O
N
)L
Tf
10
1 1
V DS =15V ,ID=1A V G S =10V
1 0.5 0.1
V G S =10V S ingle P ulse T c=25 C
6 10
60 100 300 600
1
10
30
60
R g, G ate R es is tance ( W)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum.