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STD3030NLS Dataheets PDF



Part Number STD3030NLS
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Logic Level E nhancement Mode Field Effect Transistor
Datasheet STD3030NLS DatasheetSTD3030NLS Datasheet (PDF)

www.DataSheet4U.com S amHop Microelectronics C orp. S T U/D3030NLS F E AT UR E S ( mW) Aug 08 , 2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V ID 30A R DS (ON) Max S uper high dense cell design for low R DS (ON ). 18 @ V G S = 10V 25 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless othe.

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www.DataSheet4U.com S amHop Microelectronics C orp. S T U/D3030NLS F E AT UR E S ( mW) Aug 08 , 2005 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V ID 30A R DS (ON) Max S uper high dense cell design for low R DS (ON ). 18 @ V G S = 10V 25 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ Tc=25 C S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 30 75 20 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S T U/D3030NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S a Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 12A V DS = 10V, V GS = 10V V DS = 10V, ID = 20A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 13 18 50 25 830 180 120 3 11 16 35 10 17 9 1.8 5 3 18 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS Gate Threshold Voltage V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 25 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =20A,V GS =10V V DS =15V, ID =20A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =15V, ID = 20A V GS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T U/D3030NLS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is = 10A Min Typ Max Unit 0.97 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 50 V G S =10V 20 V G S =4V V G S =4.5V V G S =8V 40 ID , Drain C urrent(A) 30 I D , Drain C urrent (A) 15 10 T j=125 C 5 25 C 0 -55 C 20 V G S =3V 10 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 30 1.6 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance Normalized 25 1.4 1.2 1.0 0.8 0.6 0.4 -55 V G S =4.5V I D =12A V G S =10V I D =20A R DS (on) (m W) 20 15 10 5 0 V G S =4.5V V G S =10V 0 10 20 30 40 50 -25 0 25 50 75 100 125 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance V S J unction Temperature 3 S T U/D3030NLS B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 42 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =20A Is , S ource-drain current (A) 35 10.0 125 C 25 C R DS (on) (m W) 28 21 14 7 0 25 C 70 C 125 C 70 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D3030NLS 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 V DS =15V I D =20A 1000 C , C apacitance (pF ) 800 600 400 C os s 200 C rs s 0 0 5 10 C is s 6 15 20 25 30 0 3 6 9 12 15 18 21 24 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 200 S witching T ime (ns ) 100 80 I D , Drain C urrent (A) im it 1m s 1 1 0 0 ms 0m 1s s DC 100 60 10 T D(on) T D(off) Tr R D S (O N )L Tf 10 1 1 V DS =15V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance ( W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum.


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