STU3055L2-60

www.DataSheet4U.com STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES ( m £[ ) Max ID 14A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = 4.5V 90 @ VGS = 2.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage a Drain Current-Continuous @T J=125 C b -Pulsed (300ms Pulse Width) Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 12 14 23 10 50 -55 to 150 Unit V V A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation a a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W STU/D3055L2-60 ELECTRICAL CHARACTERISTICS (TA 25 C unless = otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b Symbol Condition VGS 0V, ID 250uA VDS 16V, VGS 0V VGS 12V, VDS 0V VDS VGS, ID = 250uA VGS 4.5V, ID 6.0A VGS 2.5V, ID 5.2A VDS = 5V, VGS = 4.5V VDS 10V, ID 6.0A Min Typ C Max Unit 20 1 100 0.7 1.2 50 75 15 10 528 139 107 1.8 65 90 V uA nA V m-ohm m-ohm ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS c Drain-Source On-State Resistance On...