N-Channel E nhancement Mode Field Effect Transistor
Description
www.DataSheet4U.com
S T U/D3055NL
S amHop Microelectronics C orp. P reliminary May.28,2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
( m W ) Max
ID
21A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
40@ V G S = 10V 50@ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage....
