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STD38NF03L Dataheets PDF



Part Number STD38NF03L
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet STD38NF03L DatasheetSTD38NF03L Datasheet (PDF)

www.DataSheet4U.com ® STD38NF03L N - CHANNEL 30V - 0.013 Ω - 38A TO-252 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD38NF03L s s V DSS 30 V R DS(o n) < 0.019 Ω ID 38 A s s TYPICAL RDS(on) = 0.013 Ω OPTIMIZED FOR HIGH SWTICHING OPERATIONS LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packin.

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www.DataSheet4U.com ® STD38NF03L N - CHANNEL 30V - 0.013 Ω - 38A TO-252 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD38NF03L s s V DSS 30 V R DS(o n) < 0.019 Ω ID 38 A s s TYPICAL RDS(on) = 0.013 Ω OPTIMIZED FOR HIGH SWTICHING OPERATIONS LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID (*) ID I DM ( • ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 30 30 ± 20 38 27 152 45 0.3 -65 to 175 175 ( *)Value limited by the package Unit V V V A A A W W /o C o o C C (•) Pulse width limited by safe operating area March 2000 1/6 STD38NF03L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink T yp Maximum Lead Temperature F or Soldering Purpose 3.33 62.5 1.5 300 o o C/W C/W o C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 oC ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V V GS = 4.5 V Test Con ditions ID = 250 µ A I D = 19 A I D = 19 A 38 Min. 1 Typ. 1.7 0.013 0.016 Max. 2.5 0.019 0.023 Unit V Ω Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 20 V f = 1 MHz I D = 19 A V GS = 0 V Min. Typ. 28 1450 390 155 Max. Unit S pF pF pF 2/6 STD38NF03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 15 V I D = 27.5 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 55 A V GS = 4.5 V Min. Typ. .


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