STN749

www.DataSheet4U.com ® STN749 MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Ordering Code STN749 s Marking N749 s s s s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS AVAILABLE IN TAPE AND REEL PACKING 2 1 SOT-223 2 3 APPLICATIONS POWER MANAGEMENT IN PORTABLE EQUIPMENT s VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS s HEAVY LOAD DRIVER s INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value -35 -25 -5 -3 -6 1.6 -65 to 150 150 Unit V V V A A W o o C C March 2003 1/6 STN749 THERMAL DATA R t hj-amb Thermal Resistance Junction-Ambient 2 Max 78 o C/W Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test C...