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STGP10NB60S
STGP10NB60SFP- STGB10NB60S
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT
Table 1: General Features
TYPE STGP10NB60S STGP10NB60SFP STGB10NB60S
s
Figure 1: Package
IC @100°C 10 A 10 A 10 A
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VCES 600 V 600 V 600 V
VCE(sat) (Max) @25°C < 1.7 V < 1.7 V < 1.7 V
3
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3
s s s
HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP( Vcesat ) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT
TO-220FP
TO-220
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
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D²PAK Figure 2: Internal Schematic Diagram
APPLICATIONS LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL
s
Table 2: Order Codes
SALES TYPE STGP10NB60S STGP10NB60SFP STGB10NB60ST4 MARKING GP10NB60S GP10NB60SFP GB10NB60S PACKAGE TO-220 TO-220FP D²PAK PACKAGING TUBE TUBE TAPE & REEL
Rev.2 February 2005 1/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Table 3: Absolute Maximum ratings
Symbol VCES VECR VGE IC IC ICM (1) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C) Storage Temperature Operating Junction Temperature 80 0.64 -– 55 to 150 Value TO-220/D²PAK 600 20 ± 20 20 10 80 25 0.20 2500 TO-220FP V V V A A A W W/°C V °C Unit
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min. Rthj-case Thermal Resistance Junction-case TO-220 D²PAK TO-220FP Rthj-amb TL Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 Typ. Max. 1.56 5.0 62.5 Unit °C/W °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off
Symbol VBR(CES) VBR(ECS) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 IC = 1mA, VGE = 0 VGE = Max Rating, Tc=25°C VCE = Max Rating, Tc=125°C VGE = ± 20 V , VCE = 0 Min. 600 20 10 100 ±100 Typ. Max. Unit V V µA µA nA
Table 6: On
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE= VGE, IC= 250 µA VGE=15 V, IC= 5 A, VGE=15 V, IC= 10 A, VGE=15 V, IC= 10 A, Tj= 125°C Min. 2.5 1.15 1.35 1.25 Typ. Max. 5 1.7 Unit V V V V
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs (1) Cies Coes Cres Qg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VCE = 400 V, IC = 10 A, VGE = 15 V (see Figure 20) Vclamp = 480 V , Tj = 150°C RG = 1 kΩ 20 Test Conditions VCE = 25 V , IC = 10 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 7 610 65 12 33 Max. Unit S pF pF pF nC
ICL
Latching Current
A
Table 8: Switching On
Symbol td(on) tr (di/dt)on Eon (1) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 10 A RG=1KΩ VGE = 15 V (see Figure 18) VCC= 480 V, IC = 10 A RG=1KΩ VGE =15 V,Tj = 125°C Min. Typ. 0.7 0.46 8 0.6 Max. Unit µs µs A/µs mJ
Table 9: Switching Off
Symbol tc tr(Voff) tf Eoff (**) tc tr(Voff) tf Eoff (**) Parameter Cross-Over Time Off Voltage Rise Time Current Fall Time Turn-off Switching Loss Cross-Over Time Off Voltage Rise Time Current Fall Time Turn-off Switching Loss Vcc = 480 V, IC = 10 A, RG = 10 Ω , VGE = 15 V TJ = 125 °C (see Figure 18) Test Conditions Vcc = 480 V, IC = 10 A, RG = 10 Ω , VGE = 15 V TJ = 25 °C (see Figure 18) Min. Typ. 2.2 1.2 1.2 5.0 3.8 1.2 1.9 8.0 Max. Unit µs µs µs mJ µs µs µs mJ
(1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail ( Jedec Standardization)
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Figure 3: Output Characteristics Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Gate Thereshold vs Temperature
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Figure 9: Capacitance Variations Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Off Losses vs Gate Resistance
Figure 13: Off Losses vs Temperature
Figure 11: Normalized Breakdown Voltage vs Temperature
Figure 14: Off Losses vs Collector Current
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Figure 15: Thermal Impedance For TO-220/ D²PAK Figure 17: Thermal Impedance For TO-220FP
Figure 16: Turn-Off SOA
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Figure 18: Test Ci.