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STGB10NB60S

ST Microelectronics

low drop IGBT

www.DataSheet4U.com STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT...


ST Microelectronics

STGB10NB60S

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www.DataSheet4U.com STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT Table 1: General Features TYPE STGP10NB60S STGP10NB60SFP STGB10NB60S s Figure 1: Package IC @100°C 10 A 10 A 10 A 1 2 VCES 600 V 600 V 600 V VCE(sat) (Max) @25°C < 1.7 V < 1.7 V < 1.7 V 3 1 2 3 s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP( Vcesat ) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT TO-220FP TO-220 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). 3 1 D²PAK Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL s Table 2: Order Codes SALES TYPE STGP10NB60S STGP10NB60SFP STGB10NB60ST4 MARKING GP10NB60S GP10NB60SFP GB10NB60S PACKAGE TO-220 TO-220FP D²PAK PACKAGING TUBE TUBE TAPE & REEL Rev.2 February 2005 1/13 STGP10NB60S - STGP10NB60SFP - STGB10NB60S Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM (1) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withst...




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