STGB6NB60HD

www.DataSheet4U.com STGB6NB60HD N-CHANNEL 6A - 600V - D2PAK Low Drop PowerMESH™ IGBT PRELIMINARY DATA General features Type STGB6NB60HD ■ VCES 600V VCE(sat) (Max)@ 25°C < 2.7V IC @100°C 6A LOWER CRES / CIES RATIO (NO CROSS CONDUCTION SUSCEPTIBILITY) HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4micro H-family CO-PACKAGE WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 ■ ■ D²PAK ■ ■ Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application. Applications ■ ■ HIGH FREQUENCY MOTOR CONTROL SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES Order codes Sales Type STGB6NB60HD Marking GB6NB60HD Package D²PAK Packaging TAPE & REEL November 2005 This is a preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice Rev 1 1/10 www.st.com 10 1 Electrical ratings STGB6NB60HD 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at 25°C Collector Current (continuous) at 100°C Collector Current (pulsed) Gate-Emitter Voltage Total Dissipation at TC = 25°C Operating Junction Temperature – 65 to 150 Storage ...