STGW30NC60VD

TO-247 long leads STGW30NC60VD Datasheet 40 A, 600 V, fast IGBT with UltraFAST diode Features High current capability High frequency operation up to 50 kHz Very soft ultra fast recovery antiparallel diode Applications High frequency inverters, UPS Motor drive SMPS and PFC in both hard switch and resonant topologies Description This device uses the advanced PowerMESH process resulting in an excellent tradeoff between switching performance and low on-state behavior. SC12850_DIODE_IGBT Product status link STGW30NC60VD Product summary Order code STGW30NC60VD Marking GW30NC60VD Package TO-247 long leads Packing Tube DS5126 - Rev 6 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGW30NC60VD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C 80 IC(1) Continuous collector current at TC = 100 °C 40 ICL(2) Turn-off latching current 100 ICP(3) Pulsed collector current 150 VGE Gate-emitter voltage ±20 IF Diode RMS forward current at TC = 25 °C 30 IFSM Surge not repetitive forward current, tP = 10 ms sinusoidal 120 PTOT Total power dissipation at TC = 25 °C 250 TJ TSTG Operating junction temperature range Storage temperature range -55 to 150 1. Calculated according to the iterative formula: IC TC = Rtℎj − C × TJ max − VCE sat max TC TJ ...