STS8NFS30L

www.DataSheet4U.com ® STS8NFS30L ™ STripFET N - CHANNEL 30V - 0.018Ω - 8A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30 V SCHOTTKY IF (A V) 3 A R DS(on ) <0.022 Ω V RRM 30 V ID 8 A V F(M AX) 0.51 V SO-8 DESCRIPTION: This product associates the latest low voltage StripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM( ) P t ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C o o Valu e 30 30 ± 20 8 5 32 2.5 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symb ol V RRM I F(RMS) I F (AV) I FSM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average F orward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L=125 o C δ =0.5 tp= 10 ms Sinusoidal tp=100 µs Valu e 30 20 3 75 1 10000 Un it V A A A A V/ µ s () Pulse width limited by safe operating area December 1999 1/8 STS8NFS30L THERMAL DATA R thj -amb R thj -amb T s tg Tj (*) Thermal Resistance Junction-ambient MOSFET (*) Thermal Resistance Junction-ambie...