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PD - 95298
IRF7322D1PbF
FETKYä MOSFET / Schottky Diode
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Co-packaged HEXFET® Power MO...
www.DataSheet4U.com
PD - 95298
IRF7322D1PbF
FETKYä MOSFET /
Schottky Diode
l l l l l l l
Co-packaged HEXFET® Power MOSFET and
Schottky Diode Ideal For Buck
Regulator Applications P-Channel HEXFET Low VF
Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free
A A S G
1 2 3 4
8 7 6
K K D D
VDSS = -20V RDS(on) = 0.058Ω
Schottky Vf = 0.39V
5
Top View
Description
The FETKY family of co-packaged MOSFETs and
Schottky diodes offers the designer an innovative, board space saving solution for switching
regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop
Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range
Maximum
-5.3 -4.3 -43 2.0 1.3 16 ± 12 -5.0 -55 to +150
Units
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