BAS20HT1

www.DataSheet4U.com BAS20HT1 Preferred Device High Voltage Switching Diode Features Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR VRRM IF IFM(surge) Value 200 200 200 625 Unit Vdc Vdc mAdc mAdc HIGH VOLTAGE SWITCHING DIODE 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board* TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 200 1.57 RqJA TJ, Tstg 635 −55 to +150 mW mW/°C °C/W °C 1 SOD−323 CASE 477 STYLE 1 Max Unit 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *FR−5 Minimum Pad MARKING DIAGRAM JR M G G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) IR − − V(BR) 250 VF − − CD trr − − 1000 1250 5.0 50 mV pF ns − Vdc 1.0 100 mAdc Symbol Min Max Unit JR = Specific Device Code M = Date ...