N-Channel PowerTrench MOSFET
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FDS8449 40V N-Channel PowerTrench®MOSFET
December 2005
FDS8449
40V N-Channel PowerTrench® MOSFET
...
Description
www.DataSheet4U.com
FDS8449 40V N-Channel PowerTrench®MOSFET
December 2005
FDS8449
40V N-Channel PowerTrench® MOSFET
General Description
These N-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
7.6 A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V High power handling capability in a widely used surface mount package RoHS compliant
Application
Inverter Power Supplies
D D SO-8
D D
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G G S S S S S S
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
40 ±20
(Note 1a)
Units
V V A W °C
7.6 50 2.5 1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)
50 125 25
°C/W
Package Marking and Ordering Information
Device Marking FDS8449 Device FDS8449 Reel Size 13’’ Tape width 12mm Quantity 2500 units
©2005 Fairchild Semiconductor Corporation FDS8449 Rev B(W)
www.fairchildsemi.com
FDS8449 40V N-Channel PowerTrench®MOSFET
Electrical Characteristics
Symbol
EAS IAS BVDSS Δ...
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