High speed CMOS inverter using silicon gate CMOS process
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HD74HCT1G04
Inverter
ADE-205-303B (Z) 3rd. Edition April 2001 Description
The HD74HCT1G04 is high ...
Description
www.DataSheet4U.com
HD74HCT1G04
Inverter
ADE-205-303B (Z) 3rd. Edition April 2001 Description
The HD74HCT1G04 is high speed CMOS inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output.
Features
The basic gate function is lined up as hitachi uni logic series. Supplied on emboss taping for high speed automatic mounting. TTL compatible input level. Supply voltage range : 4.5 to 5.5 V Operating temperature range : –40 to +85°C |IOH| = IOL = 2 mA (min)
Outline and Article Indication
HD74HCT1G04
Index band Marking
F
5
CMPAK–5
= Control code ( or blank)
HD74HCT1G04
Function Table
Input A H L H : High level L : Low level Output Y L H
Pin Arrangement
NC
1
5
VCC
IN Y
2
GND
3
4
OUT Y
(Top view)
2
HD74HCT1G04
Absolute Maximum Ratings
Item Supply voltage range Input voltage range
*1 *1, 2
Symbol VCC VI VO I IK I OK IO
Ratings –0.5 to 7.0 –0.5 to VCC + 0.5 –0.5 to VCC + 0.5 ±20 ±20 ±25 ±25 200 –65 to 150
Unit V V V mA mA mA mA mW °C
Test Conditions
Output voltage range Input clamp current Output clamp current
Output : H or L VI < 0 or VI > VCC VO < 0 or VO >VCC VO = 0 to VCC
Continuous output current
Continuous current through I CC or IGND VCC or GND Maximum power dissipation PT at Ta = 25°C (in still air) *3 Storage temperature Notes: Tstg
The absolute maximum ratings are...
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