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HD74HCT1G04

Hitachi Semiconductor

High speed CMOS inverter using silicon gate CMOS process

www.DataSheet4U.com HD74HCT1G04 Inverter ADE-205-303B (Z) 3rd. Edition April 2001 Description The HD74HCT1G04 is high ...


Hitachi Semiconductor

HD74HCT1G04

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www.DataSheet4U.com HD74HCT1G04 Inverter ADE-205-303B (Z) 3rd. Edition April 2001 Description The HD74HCT1G04 is high speed CMOS inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output. Features The basic gate function is lined up as hitachi uni logic series. Supplied on emboss taping for high speed automatic mounting. TTL compatible input level. Supply voltage range : 4.5 to 5.5 V Operating temperature range : –40 to +85°C |IOH| = IOL = 2 mA (min) Outline and Article Indication HD74HCT1G04 Index band Marking F 5 CMPAK–5 = Control code ( or blank) HD74HCT1G04 Function Table Input A H L H : High level L : Low level Output Y L H Pin Arrangement NC 1 5 VCC IN Y 2 GND 3 4 OUT Y (Top view) 2 HD74HCT1G04 Absolute Maximum Ratings Item Supply voltage range Input voltage range *1 *1, 2 Symbol VCC VI VO I IK I OK IO Ratings –0.5 to 7.0 –0.5 to VCC + 0.5 –0.5 to VCC + 0.5 ±20 ±20 ±25 ±25 200 –65 to 150 Unit V V V mA mA mA mA mW °C Test Conditions Output voltage range Input clamp current Output clamp current Output : H or L VI < 0 or VI > VCC VO < 0 or VO >VCC VO = 0 to VCC Continuous output current Continuous current through I CC or IGND VCC or GND Maximum power dissipation PT at Ta = 25°C (in still air) *3 Storage temperature Notes: Tstg The absolute maximum ratings are...




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